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| VHFD 16 Half Controlled Single Phase Rectifier Bridge Including Freewheeling Diode and Field Diodes VRRM = 800-1600 V IdAVM = 21 A VRSM VDSM V 900 1300 1500 1700 VRRM VDRM V 800 1200 1400 1600 Type 3 12 5 VHFD 16-08io1 VHFD 16-12io1 VHFD 16-14io1 VHFD 16-16io1 6 8 10 Bridge and Freewheeling Diode Symbol IdAV IdAVM x IFRMS, ITRMS IFSM, ITSM Test Conditions TH = 85C, module module per leg TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V I2t TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V (di/dt)cr t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 16 21 15 150 170 130 140 110 120 85 80 150 A A A A A A A A2s A2s A2s A2s A/ms Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1600 V Low forward voltage drop Leads suitable for PC board soldering UL registered E 72873 q q q q q q q Applications Supply for DC power equipment DC motor control q q q q q TVJ = 125C repetitive, IT = 50 A f = 50 Hz, tP = 200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 0.5 IdAV diG/dt = 0.3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) TVJ = TVJM IT = 0.5 IdAVM tp = 30 ms tp = 500 ms tp = 10 ms 500 1000 10 10 5 1 0.5 A/ms V/ms V W W W W C C C V~ V~ mm mm m/s2 Nm lb.in. g Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling (dv/dt)cr VRGM PGM Dimensions in mm (1 mm = 0.0394") PGAVM TVJ TVJM Tstg VISOL dS dA a Md Weight (c) 2000 IXYS All rights reserved 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s -40...+125 125 -40...+125 3000 3600 12.7 9.4 50 2-2.5 18-22 35 Creep distance on surface Strike distance in air Max. allowable acceleration Mounting torque (M5) (10-32 UNF) 1-3 VHFD 16 Symbol IR, ID VT, VF VT0 rT VGT IGT Test Conditions VR = VRRM; VD = VDRM IT, IF = 45 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) VD = 6 V; VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C VD = 2/3 VDRM VD = 2/3 VDRM TVJ = 25C TVJ = -40C TVJ = 125C typ. TVJ = TVJM TVJ = 25C Characteristic Values 5 0.3 2.55 1.0 40 1.0 1.2 65 80 50 0.2 5 150 200 100 100 2 150 75 2.4 0.6 3.0 0.75 mA mA V V mW V V mA mA mA V mA mA mA mA mA ms ms mC K/W K/W K/W K/W 1000 s tgd 100 typ. Limit TVJ = 25C 0.1 1 1 10 1: IGT, TVJ = 125C V VG 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 2 3 6 4 5 VGD IGD IL TVJ = TVJM; TVJ = TVJM; IG = 0.3 A; tG = 30 ms; diG/dt = 0.3 A/ms; IGD, TVJ = 125C 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 1 10 100 1000 IG mA IH tgd tq Qr RthJC RthJH TVJ = 25C; VD = 6 V; RGK = TVJ = 25C; VD = 0.5VDRM IG = 0.3 A; diG/dt = 0.3 A/ms TVJ = 125C, IT = 15 A, tP = 300 ms, VR = 100 V di/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM per thyristor (diode); DC current per module per thyristor (diode); DC current per module Fig. 1 Gate trigger range 10 Field Diodes Symbol IFAV IFAVM IFRMS IFSM Test Conditions TH = 85C, per Diode per diode per diode TVJ = 45C; VR = 0 V TVJ = TVJM VR = 0 V I2t TVJ = 45C VR = 0 V TVJ = TVJM VR = 0 V IR VF VT0 rT RthJC RthJH VR = VRRM t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = TVJM TVJ = 25C Maximum Ratings 4 4 6 100 110 85 94 50 50 36 37 1 0.15 1.83 0.9 50 4.4 5.2 A A A A A A A A2s A2s A2s A2s mA mA V V mW K/W K/W 1 10 100 IG mA 1000 Fig. 2 Gate controlled delay time tgd IF = 21 A; TVJ = 25C For power-loss calculations only (TVJ = 125C) per diode; DC current per diode; DC current (c) 2000 IXYS All rights reserved 2-3 750 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. x for resistive load IXYS reserves the right to change limits, test conditions and dimensions. VHFD 16 70 A 60 IF 50 120 A 100 IFSM 50Hz, 80% VRRM 103 As 2 VR = 0 V typ. max. TVJ = 45C 80 It 2 TVJ =125C 40 TVJ = 25C 30 TVJ = 45C 60 102 40 20 10 0 0 1 2 VF 3 V 4 20 TVJ = 125C TVJ = 125C 0 0.001 101 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t Fig. 3 Forward current versus voltage drop per diode 90 W 80 Fig. 4 Surge overload current Fig. 5 I2t versus time per diode 25 RthHA : 70 Ptot 60 50 40 30 20 10 0 0 5 10 15 20 Id(AV)M A 0 25 0 20 40 60 80 100 120 C 140 Tamb A Id(AV)M 20 0.5 1.0 1.5 2.0 3.0 4.0 6.0 K/W K/W K/W K/W K/W K/W K/W 15 10 5 0 0 20 40 60 80 100 120 C TH Fig. 6 Power dissipation versus direct output current and ambient temperature 3.5 K/W 3.0 ZthJH 2.5 2.0 1.5 1.0 0.5 0.0 0.001 Fig. 7 Max. forward current versus heatsink temperature Constants for ZthJH calculation: i 1 2 3 4 0.01 0.1 1 t s 10 Rthi (K/W) 0.01 0.4 1.69 0.9 ti (s) 0.008 0.05 0.06 0.25 Fig. 8 Transient thermal impedance junction to heatsink (c) 2000 IXYS All rights reserved 3-3 |
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